Photoreflectance study of GaAs/GaAsP strained-barrier quantum well structures

GaAs/GaAs 1- x P x strained-barrier quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE) have been investigated using photoreflectance (PR) spectroscopy. On the basis of the square-potential model, we have determined the band offsets at the heterojunction and their dependence on...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1993, Vol.32 (1B), p.544-547
Main Authors: YAGUCHI, H, XIONG ZHANG, OTA, K, NAGAHARA, M, ONABE, K, SHIRAKI, Y, ITO, R
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
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Summary:GaAs/GaAs 1- x P x strained-barrier quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE) have been investigated using photoreflectance (PR) spectroscopy. On the basis of the square-potential model, we have determined the band offsets at the heterojunction and their dependence on the phosphorus composition. It was found that in the GaAs/GaAs 1- x P x strained-barrier quantum well, the band offsets are almost linearly dependent on the phosphorus composition in the range of x ≤0.23. In addition, it was derived that the conduction band offset ratio Q c =0.57±0.05. This result is consistent with our previous study concerning GaAs/GaAsP “strained-well” quantum well structures.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.32.544