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Preparation and Characteristics of a Superconducting Base Transistor with an Au/Ba 1-x K x BiO 3 /Niobium-Doped SrTiO 3 Structure

We have observed the fundamental operation of a superconducting base transistor using a Ba 1- x K x BiO 3 (BKBO) oxide superconductor. The transistor had a structure consisting of planar-type Au/natural-barrier/BKBO/niobium-doped SrTiO 3 (STO:Nb), where Au, BKBO and STO:Nb correspond to the emitter,...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1993-02, Vol.32 (2R), p.783
Main Authors: Suzuki, Hiroshi, Yamamoto, Tetsuya, Suzuki, Seiji, Iyori, Masahiro, Takahashi, Kazuhiko, Usuki, Tatsuro, Yorinobu Yoshisato, Yorinobu Yoshisato, Shoichi Nakano, Shoichi Nakano
Format: Article
Language:English
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Summary:We have observed the fundamental operation of a superconducting base transistor using a Ba 1- x K x BiO 3 (BKBO) oxide superconductor. The transistor had a structure consisting of planar-type Au/natural-barrier/BKBO/niobium-doped SrTiO 3 (STO:Nb), where Au, BKBO and STO:Nb correspond to the emitter, base and collector in the transistor, respectively. The Au/natural-barrier/BKBO emitter-base junction showed good tunneling characteristics, reflecting the superconductivity of BKBO. The BKBO/STO:Nb base-collector junction showed asymmetric I-V characteristics. Electrical measurements during transistor operation revealed collector current increment as the emitter current increased at 4.5 K. Furthermore, a transistor with a 100-nm thick base layer showed a maximum common-base current gain of over 0.5 at 4.5 K.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.32.783