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Preparation and Characteristics of a Superconducting Base Transistor with an Au/Ba 1-x K x BiO 3 /Niobium-Doped SrTiO 3 Structure
We have observed the fundamental operation of a superconducting base transistor using a Ba 1- x K x BiO 3 (BKBO) oxide superconductor. The transistor had a structure consisting of planar-type Au/natural-barrier/BKBO/niobium-doped SrTiO 3 (STO:Nb), where Au, BKBO and STO:Nb correspond to the emitter,...
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Published in: | Japanese Journal of Applied Physics 1993-02, Vol.32 (2R), p.783 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We have observed the fundamental operation of a superconducting base transistor using a Ba
1-
x
K
x
BiO
3
(BKBO) oxide superconductor. The transistor had a structure consisting of planar-type Au/natural-barrier/BKBO/niobium-doped SrTiO
3
(STO:Nb), where Au, BKBO and STO:Nb correspond to the emitter, base and collector in the transistor, respectively. The Au/natural-barrier/BKBO emitter-base junction showed good tunneling characteristics, reflecting the superconductivity of BKBO. The BKBO/STO:Nb base-collector junction showed asymmetric
I-V
characteristics. Electrical measurements during transistor operation revealed collector current increment as the emitter current increased at 4.5 K. Furthermore, a transistor with a 100-nm thick base layer showed a maximum common-base current gain of over 0.5 at 4.5 K. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.32.783 |