Depth profiling of As in an AlAs/GaAs multilayer by a new laser-induced sputtered neutral mass spectrometry system

Depth profiling of As in an AlAs/GaAs multilayer has been measured with a pulse-counting photoion mass spectrometer (PPMS) that can perform depth profiling in two different modes: a secondary ion mass spectrometry (SIMS) mode and a laser-induced sputtered neutral mass spectrometry (SNMS) mode. In SI...

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Published in:Japanese Journal of Applied Physics 1993-02, Vol.32 (2), p.982-984
Main Authors: HIGASHI, Y, MARUO, T, TANAKA, T, HOMMA, Y
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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cited_by cdi_FETCH-LOGICAL-c355t-a89a5ffd67d674e41be760a5d5d1967879e7483757493b05443bfb1a7dad4a9a3
cites cdi_FETCH-LOGICAL-c355t-a89a5ffd67d674e41be760a5d5d1967879e7483757493b05443bfb1a7dad4a9a3
container_end_page 984
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container_start_page 982
container_title Japanese Journal of Applied Physics
container_volume 32
creator HIGASHI, Y
MARUO, T
TANAKA, T
HOMMA, Y
description Depth profiling of As in an AlAs/GaAs multilayer has been measured with a pulse-counting photoion mass spectrometer (PPMS) that can perform depth profiling in two different modes: a secondary ion mass spectrometry (SIMS) mode and a laser-induced sputtered neutral mass spectrometry (SNMS) mode. In SIMS mode, the As secondary ion intensity in GaAs layers is about three orders of magnitude less than that in AlAs layers under O 2 + bombardment even though the As concentration is the same in both layers. In SNMS mode, the As photoion intensity in GaAs is only about twice that in AlAs. This difference can be attributed to sputtering yield differences between GaAs and AlAs. This result suggests that laser-induced SNMS by PPMS will give quantitative information and accurate depth profiling of layered samples by simply correcting sputtering yields.
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fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_32_982</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4667051</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-a89a5ffd67d674e41be760a5d5d1967879e7483757493b05443bfb1a7dad4a9a3</originalsourceid><addsrcrecordid>eNo9kE9LxDAQxYMouK6e_AI5eJPuJk3StMey6uqyoAc9l2k70Zb0D0mK9NtbWREGZn6PN-_wCLnlbMO5FNu2hXEj4k2WxmdkxYXUkWSJOicrxmIeySyOL8mV9-2CiZJ8RdwDjuGLjm4wjW36TzoYmnva9BR6mtvcb_ewcDfZ0FiY0dFypkB7_KYWPLqo6eupwpr6cQoB3XL1OAUHlnbg_SJjFdzQYXAz9bMP2F2TCwPW483fXpOPp8f33XN0fN2_7PJjVAmlQgRpBsqYOtHLSJS8RJ0wULWqeZboVGeoZSq00jITJVNSitKUHHQNtYQMxJrcn3IrN3jv0BSjazpwc8FZ8VtXcTjkb4WIi6WuxX13co_gK7DGQV81_v9FJolmiosffUNr0w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Depth profiling of As in an AlAs/GaAs multilayer by a new laser-induced sputtered neutral mass spectrometry system</title><source>Institute of Physics IOPscience extra</source><source>Institute of Physics</source><creator>HIGASHI, Y ; MARUO, T ; TANAKA, T ; HOMMA, Y</creator><creatorcontrib>HIGASHI, Y ; MARUO, T ; TANAKA, T ; HOMMA, Y</creatorcontrib><description>Depth profiling of As in an AlAs/GaAs multilayer has been measured with a pulse-counting photoion mass spectrometer (PPMS) that can perform depth profiling in two different modes: a secondary ion mass spectrometry (SIMS) mode and a laser-induced sputtered neutral mass spectrometry (SNMS) mode. In SIMS mode, the As secondary ion intensity in GaAs layers is about three orders of magnitude less than that in AlAs layers under O 2 + bombardment even though the As concentration is the same in both layers. In SNMS mode, the As photoion intensity in GaAs is only about twice that in AlAs. This difference can be attributed to sputtering yield differences between GaAs and AlAs. This result suggests that laser-induced SNMS by PPMS will give quantitative information and accurate depth profiling of layered samples by simply correcting sputtering yields.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.32.982</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Japanese Journal of Applied Physics, 1993-02, Vol.32 (2), p.982-984</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-a89a5ffd67d674e41be760a5d5d1967879e7483757493b05443bfb1a7dad4a9a3</citedby><cites>FETCH-LOGICAL-c355t-a89a5ffd67d674e41be760a5d5d1967879e7483757493b05443bfb1a7dad4a9a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=4667051$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>HIGASHI, Y</creatorcontrib><creatorcontrib>MARUO, T</creatorcontrib><creatorcontrib>TANAKA, T</creatorcontrib><creatorcontrib>HOMMA, Y</creatorcontrib><title>Depth profiling of As in an AlAs/GaAs multilayer by a new laser-induced sputtered neutral mass spectrometry system</title><title>Japanese Journal of Applied Physics</title><description>Depth profiling of As in an AlAs/GaAs multilayer has been measured with a pulse-counting photoion mass spectrometer (PPMS) that can perform depth profiling in two different modes: a secondary ion mass spectrometry (SIMS) mode and a laser-induced sputtered neutral mass spectrometry (SNMS) mode. In SIMS mode, the As secondary ion intensity in GaAs layers is about three orders of magnitude less than that in AlAs layers under O 2 + bombardment even though the As concentration is the same in both layers. In SNMS mode, the As photoion intensity in GaAs is only about twice that in AlAs. This difference can be attributed to sputtering yield differences between GaAs and AlAs. This result suggests that laser-induced SNMS by PPMS will give quantitative information and accurate depth profiling of layered samples by simply correcting sputtering yields.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kE9LxDAQxYMouK6e_AI5eJPuJk3StMey6uqyoAc9l2k70Zb0D0mK9NtbWREGZn6PN-_wCLnlbMO5FNu2hXEj4k2WxmdkxYXUkWSJOicrxmIeySyOL8mV9-2CiZJ8RdwDjuGLjm4wjW36TzoYmnva9BR6mtvcb_ewcDfZ0FiY0dFypkB7_KYWPLqo6eupwpr6cQoB3XL1OAUHlnbg_SJjFdzQYXAz9bMP2F2TCwPW483fXpOPp8f33XN0fN2_7PJjVAmlQgRpBsqYOtHLSJS8RJ0wULWqeZboVGeoZSq00jITJVNSitKUHHQNtYQMxJrcn3IrN3jv0BSjazpwc8FZ8VtXcTjkb4WIi6WuxX13co_gK7DGQV81_v9FJolmiosffUNr0w</recordid><startdate>19930201</startdate><enddate>19930201</enddate><creator>HIGASHI, Y</creator><creator>MARUO, T</creator><creator>TANAKA, T</creator><creator>HOMMA, Y</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19930201</creationdate><title>Depth profiling of As in an AlAs/GaAs multilayer by a new laser-induced sputtered neutral mass spectrometry system</title><author>HIGASHI, Y ; MARUO, T ; TANAKA, T ; HOMMA, Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-a89a5ffd67d674e41be760a5d5d1967879e7483757493b05443bfb1a7dad4a9a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>HIGASHI, Y</creatorcontrib><creatorcontrib>MARUO, T</creatorcontrib><creatorcontrib>TANAKA, T</creatorcontrib><creatorcontrib>HOMMA, Y</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HIGASHI, Y</au><au>MARUO, T</au><au>TANAKA, T</au><au>HOMMA, Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Depth profiling of As in an AlAs/GaAs multilayer by a new laser-induced sputtered neutral mass spectrometry system</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1993-02-01</date><risdate>1993</risdate><volume>32</volume><issue>2</issue><spage>982</spage><epage>984</epage><pages>982-984</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Depth profiling of As in an AlAs/GaAs multilayer has been measured with a pulse-counting photoion mass spectrometer (PPMS) that can perform depth profiling in two different modes: a secondary ion mass spectrometry (SIMS) mode and a laser-induced sputtered neutral mass spectrometry (SNMS) mode. In SIMS mode, the As secondary ion intensity in GaAs layers is about three orders of magnitude less than that in AlAs layers under O 2 + bombardment even though the As concentration is the same in both layers. In SNMS mode, the As photoion intensity in GaAs is only about twice that in AlAs. This difference can be attributed to sputtering yield differences between GaAs and AlAs. This result suggests that laser-induced SNMS by PPMS will give quantitative information and accurate depth profiling of layered samples by simply correcting sputtering yields.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.32.982</doi><tpages>3</tpages></addata></record>
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source Institute of Physics IOPscience extra; Institute of Physics
subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
title Depth profiling of As in an AlAs/GaAs multilayer by a new laser-induced sputtered neutral mass spectrometry system
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T04%3A22%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Depth%20profiling%20of%20As%20in%20an%20AlAs/GaAs%20multilayer%20by%20a%20new%20laser-induced%20sputtered%20neutral%20mass%20spectrometry%20system&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=HIGASHI,%20Y&rft.date=1993-02-01&rft.volume=32&rft.issue=2&rft.spage=982&rft.epage=984&rft.pages=982-984&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.32.982&rft_dat=%3Cpascalfrancis_cross%3E4667051%3C/pascalfrancis_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c355t-a89a5ffd67d674e41be760a5d5d1967879e7483757493b05443bfb1a7dad4a9a3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true