Transverse-Mode Characteristics of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers Considering Gain Offset

We have fabricated InGaAs/GaAs vertical-cavity surface-emitting lasers with modulation-doped graded distributed Bragg reflectors (DBRs) grown by metal-organic chemical vapor deposition (MOCVD). The threshold current was 3.2 mA. By observing the spontaneous emission through DBRs, we found that transv...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1993-11, Vol.32 (11A), p.L1612-L1614, Article L1612
Main Authors: KANEKO, Y, TAMANUKI, T, KATOH, M, MAEKAWA, H, KOYAMA, F, IGA, K
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:We have fabricated InGaAs/GaAs vertical-cavity surface-emitting lasers with modulation-doped graded distributed Bragg reflectors (DBRs) grown by metal-organic chemical vapor deposition (MOCVD). The threshold current was 3.2 mA. By observing the spontaneous emission through DBRs, we found that transverse mode behavior depends on gain characteristics. Single fundamental transverse-mode lasing is achieved at a negative gain offset and multiple transverse-mode lasing is achieved at a positive gain offset.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.32.L1612