Thermal Stability Characterization of Doped Layers and Heterostructures Grown by Si-Molecular Beam Epitaxy

The thermal stability of layers grown by Si-molecular beam epitaxy is reported in a comparative study of strain induced in Si by heavy B doping and by Si 1- x Ge x alloying. High-resolution X-ray diffraction mapping was employed as the major analytical tool. The strain relaxation under high-temperat...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1994, Vol.33 (4S), p.2381
Main Authors: Sardela Jr, Mauro R., Radamson, Homayon H., Ni, Wei-Xin, Jan-Eric Sundgren, Jan-Eric Sundgren, Göran V. Hansson, Göran V. Hansson
Format: Article
Language:English
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Summary:The thermal stability of layers grown by Si-molecular beam epitaxy is reported in a comparative study of strain induced in Si by heavy B doping and by Si 1- x Ge x alloying. High-resolution X-ray diffraction mapping was employed as the major analytical tool. The strain relaxation under high-temperature annealing is shown to be dominated by the formation of precipitates and by diffusion in the case of heavy doping but with a negligible amount of dislocations. In the Si 1- x Ge x /Si heterostructures, the process is dominated by strain relaxation via formation of misfit dislocations.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.33.2381