Properties of the p+ poly-Si gate fabricated using the As preamorphization method

In a deep submicron p-channel metal oxide field effect transistor (PMOSFET), the importance of the p + poly-Si gate with less boron penetration and higher conductivity increases. With As implantation prior to B + implantation, the conductivity of the p + poly-Si gate was improved and the boron penet...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1994-05, Vol.33 (5A), p.2468-2473
Main Authors: Kim, Yeo Hwan, Kwon, Sang Jik, Kuk Jin Chun, Kuk Jin Chun, Jong Duk Lee, Jong Duk Lee
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:In a deep submicron p-channel metal oxide field effect transistor (PMOSFET), the importance of the p + poly-Si gate with less boron penetration and higher conductivity increases. With As implantation prior to B + implantation, the conductivity of the p + poly-Si gate was improved and the boron penetration was suppressed. These phenomena can be attributed to the enhancement of the grain growth in the As-preamorphized film and the retarded boron diffusion during annealing. DC conductivity of the film preamorphized by As + ions at 180 keV and 4×10 14 cm -2 was about 36% higher than that of the B implanted film without As preimplantation, in spite of the carrier compensation effect. Cross-sectional transmission electron microscopy (XTEM) micrographs show the bilayer with an upper layer of larger grain size ( ∼0.22 µm) and a lower layer of smaller grain size ( ∼0.03 µm) in the preamorphized and annealed film.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.33.2468