Preparation of Pb(Zr, Ti)O 3 Thin Films by Multitarget Sputtering

Thin lead zirconate titanate [PZT] (Zr/Ti=50/50) films (230–430 nm) were deposited by multitarget sputtering with three stoichiometric PZT targets and one PbO target. To control Pb content in film, the rf power for the PbO target was varied. The rf power for each PZT target was also varied to contro...

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Published in:Japanese Journal of Applied Physics 1994-09, Vol.33 (9S), p.5244
Main Authors: Hase, Takashi, Hirata, Kazuo, Amanuma, Kazushi, Hosokawa, Naokichi, Yoichi Miyasaka, Yoichi Miyasaka
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Language:English
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cited_by cdi_FETCH-LOGICAL-c165t-138271192edcf5fdd5731dc9a34ad87fa45ae7f02748d90127ae01c14720b8ce3
cites cdi_FETCH-LOGICAL-c165t-138271192edcf5fdd5731dc9a34ad87fa45ae7f02748d90127ae01c14720b8ce3
container_end_page
container_issue 9S
container_start_page 5244
container_title Japanese Journal of Applied Physics
container_volume 33
creator Hase, Takashi
Hirata, Kazuo
Amanuma, Kazushi
Hosokawa, Naokichi
Yoichi Miyasaka, Yoichi Miyasaka
description Thin lead zirconate titanate [PZT] (Zr/Ti=50/50) films (230–430 nm) were deposited by multitarget sputtering with three stoichiometric PZT targets and one PbO target. To control Pb content in film, the rf power for the PbO target was varied. The rf power for each PZT target was also varied to control the deposition rate. PZT films with single perovskite phase or dominant perovskite phase were obtained only when the film composition was self-controlled. Low deposition rate resulted in a wider range of PbO input power in which Pb/(Zr+Ti) ratio was almost constant. Therefore low deposition rate would enhance the self composition control (SCC) mechanism. A 240-nm-thick PZT film deposited under the SCC mechanism and low deposition rate showed remanent polarization of 21.5 µ C/cm 2 , dielectric constant of 600 and leakage current of 7.0×10 -8 A/cm 2 .
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_33_5244</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_33_5244</sourcerecordid><originalsourceid>FETCH-LOGICAL-c165t-138271192edcf5fdd5731dc9a34ad87fa45ae7f02748d90127ae01c14720b8ce3</originalsourceid><addsrcrecordid>eNotz09LwzAcxvEgCtbpzReQo8Ja88ufpj2W4dQxWcF68VLSNJmRri1pdti7d0VPD9_LAx-E7oEkAJw9bTZFmTCWCMr5BYqAcRlzkopLFBFCIeY5pdfoZpp-zpkKDhEqSm9G5VVwQ48Hi8vm4csvceUed5jh6tv1eO26w4SbE34_dsEF5fcm4I_xGILxrt_foiurusnc_e8Cfa6fq9VrvN29vK2KbawhFSEGllEJkFPTaits2wrJoNW5Yly1mbSKC2WkJVTyrM0JUKkMAQ1cUtJk2rAFWv79aj9Mkze2Hr07KH-qgdQzv575NWP1zGe_AydLuQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Preparation of Pb(Zr, Ti)O 3 Thin Films by Multitarget Sputtering</title><source>Institute of Physics IOPscience extra</source><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Hase, Takashi ; Hirata, Kazuo ; Amanuma, Kazushi ; Hosokawa, Naokichi ; Yoichi Miyasaka, Yoichi Miyasaka</creator><creatorcontrib>Hase, Takashi ; Hirata, Kazuo ; Amanuma, Kazushi ; Hosokawa, Naokichi ; Yoichi Miyasaka, Yoichi Miyasaka</creatorcontrib><description>Thin lead zirconate titanate [PZT] (Zr/Ti=50/50) films (230–430 nm) were deposited by multitarget sputtering with three stoichiometric PZT targets and one PbO target. To control Pb content in film, the rf power for the PbO target was varied. The rf power for each PZT target was also varied to control the deposition rate. PZT films with single perovskite phase or dominant perovskite phase were obtained only when the film composition was self-controlled. Low deposition rate resulted in a wider range of PbO input power in which Pb/(Zr+Ti) ratio was almost constant. Therefore low deposition rate would enhance the self composition control (SCC) mechanism. A 240-nm-thick PZT film deposited under the SCC mechanism and low deposition rate showed remanent polarization of 21.5 µ C/cm 2 , dielectric constant of 600 and leakage current of 7.0×10 -8 A/cm 2 .</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.33.5244</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1994-09, Vol.33 (9S), p.5244</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c165t-138271192edcf5fdd5731dc9a34ad87fa45ae7f02748d90127ae01c14720b8ce3</citedby><cites>FETCH-LOGICAL-c165t-138271192edcf5fdd5731dc9a34ad87fa45ae7f02748d90127ae01c14720b8ce3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Hase, Takashi</creatorcontrib><creatorcontrib>Hirata, Kazuo</creatorcontrib><creatorcontrib>Amanuma, Kazushi</creatorcontrib><creatorcontrib>Hosokawa, Naokichi</creatorcontrib><creatorcontrib>Yoichi Miyasaka, Yoichi Miyasaka</creatorcontrib><title>Preparation of Pb(Zr, Ti)O 3 Thin Films by Multitarget Sputtering</title><title>Japanese Journal of Applied Physics</title><description>Thin lead zirconate titanate [PZT] (Zr/Ti=50/50) films (230–430 nm) were deposited by multitarget sputtering with three stoichiometric PZT targets and one PbO target. To control Pb content in film, the rf power for the PbO target was varied. The rf power for each PZT target was also varied to control the deposition rate. PZT films with single perovskite phase or dominant perovskite phase were obtained only when the film composition was self-controlled. Low deposition rate resulted in a wider range of PbO input power in which Pb/(Zr+Ti) ratio was almost constant. Therefore low deposition rate would enhance the self composition control (SCC) mechanism. A 240-nm-thick PZT film deposited under the SCC mechanism and low deposition rate showed remanent polarization of 21.5 µ C/cm 2 , dielectric constant of 600 and leakage current of 7.0×10 -8 A/cm 2 .</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1994</creationdate><recordtype>article</recordtype><recordid>eNotz09LwzAcxvEgCtbpzReQo8Ja88ufpj2W4dQxWcF68VLSNJmRri1pdti7d0VPD9_LAx-E7oEkAJw9bTZFmTCWCMr5BYqAcRlzkopLFBFCIeY5pdfoZpp-zpkKDhEqSm9G5VVwQ48Hi8vm4csvceUed5jh6tv1eO26w4SbE34_dsEF5fcm4I_xGILxrt_foiurusnc_e8Cfa6fq9VrvN29vK2KbawhFSEGllEJkFPTaits2wrJoNW5Yly1mbSKC2WkJVTyrM0JUKkMAQ1cUtJk2rAFWv79aj9Mkze2Hr07KH-qgdQzv575NWP1zGe_AydLuQ</recordid><startdate>19940901</startdate><enddate>19940901</enddate><creator>Hase, Takashi</creator><creator>Hirata, Kazuo</creator><creator>Amanuma, Kazushi</creator><creator>Hosokawa, Naokichi</creator><creator>Yoichi Miyasaka, Yoichi Miyasaka</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19940901</creationdate><title>Preparation of Pb(Zr, Ti)O 3 Thin Films by Multitarget Sputtering</title><author>Hase, Takashi ; Hirata, Kazuo ; Amanuma, Kazushi ; Hosokawa, Naokichi ; Yoichi Miyasaka, Yoichi Miyasaka</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c165t-138271192edcf5fdd5731dc9a34ad87fa45ae7f02748d90127ae01c14720b8ce3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1994</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hase, Takashi</creatorcontrib><creatorcontrib>Hirata, Kazuo</creatorcontrib><creatorcontrib>Amanuma, Kazushi</creatorcontrib><creatorcontrib>Hosokawa, Naokichi</creatorcontrib><creatorcontrib>Yoichi Miyasaka, Yoichi Miyasaka</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hase, Takashi</au><au>Hirata, Kazuo</au><au>Amanuma, Kazushi</au><au>Hosokawa, Naokichi</au><au>Yoichi Miyasaka, Yoichi Miyasaka</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation of Pb(Zr, Ti)O 3 Thin Films by Multitarget Sputtering</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1994-09-01</date><risdate>1994</risdate><volume>33</volume><issue>9S</issue><spage>5244</spage><pages>5244-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Thin lead zirconate titanate [PZT] (Zr/Ti=50/50) films (230–430 nm) were deposited by multitarget sputtering with three stoichiometric PZT targets and one PbO target. To control Pb content in film, the rf power for the PbO target was varied. The rf power for each PZT target was also varied to control the deposition rate. PZT films with single perovskite phase or dominant perovskite phase were obtained only when the film composition was self-controlled. Low deposition rate resulted in a wider range of PbO input power in which Pb/(Zr+Ti) ratio was almost constant. Therefore low deposition rate would enhance the self composition control (SCC) mechanism. A 240-nm-thick PZT film deposited under the SCC mechanism and low deposition rate showed remanent polarization of 21.5 µ C/cm 2 , dielectric constant of 600 and leakage current of 7.0×10 -8 A/cm 2 .</abstract><doi>10.1143/JJAP.33.5244</doi></addata></record>
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title Preparation of Pb(Zr, Ti)O 3 Thin Films by Multitarget Sputtering
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T19%3A29%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Preparation%20of%20Pb(Zr,%20Ti)O%203%20Thin%20Films%20by%20Multitarget%20Sputtering&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Hase,%20Takashi&rft.date=1994-09-01&rft.volume=33&rft.issue=9S&rft.spage=5244&rft.pages=5244-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.33.5244&rft_dat=%3Ccrossref%3E10_1143_JJAP_33_5244%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c165t-138271192edcf5fdd5731dc9a34ad87fa45ae7f02748d90127ae01c14720b8ce3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true