Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Highly strained δ- and uniformly doped InP/InGaAs/InP high-electron-mobility transistor (HEMT) structures with InGaP cap layers were fabricated. Photoluminescence (PL), secondary ion mass spectrometry (SIMS) and Hall measurement were used to analyse these two structures. The δ-doped HEMT structure r...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1994-12, Vol.33 (12R), p.6514
Main Authors: Hsu, Rong-Tay, Lin, Wei, Wei-Chou Hsu, Wei-Chou Hsu, Jan-Shing Su, Jan-Shing Su
Format: Article
Language:English
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Summary:Highly strained δ- and uniformly doped InP/InGaAs/InP high-electron-mobility transistor (HEMT) structures with InGaP cap layers were fabricated. Photoluminescence (PL), secondary ion mass spectrometry (SIMS) and Hall measurement were used to analyse these two structures. The δ-doped HEMT structure revealed higher mobilities than the uniformly doped HEMT's, especially at low temperature, due to the reduction of impurity scattering. The carrier concentrations and mobilities at 77 K were 2.7× 10 12 cm -2 and 57861 cm 2 /v·s for the uniformly doped structure, and were 1.8× 10 12 cm -2 and 99300 cm 2 /v·s for the δ-doped structure.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.33.6514