Selective Growth of Wire Structures of GaAs on CaF 2 Using Focused Electron Beams

A selective growth method using the surface modification effect on a fluoride surface by electron beam exposure was investigated as a new microfabrication technique. Wire structures of GaAs on CaF 2 with 500 nm width were obtained using a 40 keV electron beam at a dose of 2 µC/cm. The size of these...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1994-01, Vol.33 (1S), p.914
Main Authors: Kawasaki, Koji, Kazuo Tsutsui, Kazuo Tsutsui, Seijiro Furukawa, Seijiro Furukawa
Format: Article
Language:English
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Summary:A selective growth method using the surface modification effect on a fluoride surface by electron beam exposure was investigated as a new microfabrication technique. Wire structures of GaAs on CaF 2 with 500 nm width were obtained using a 40 keV electron beam at a dose of 2 µC/cm. The size of these structures was dependent on the dose and energy of the electron beam and thickness of the As film covering the surface of CaF 2 . From these experimental results and Monte Carlo simulation of injected electrons, it was found that the linewidths of structures were mainly determined by the forward scattering of electrons in the As film. The possibility of obtaining smaller size GaAs using higher energy electron beam and thinner As film is discussed.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.33.914