Low-Pressure Metalorganic Chemical Vapor Deposition of a CuGaSe 2 /CuAlSe 2 Heterostructure

A single-heterostructure of CuGaSe 2 /CuAlSe 2 chalcopyrite semiconductors was successfully grown epitaxially on a GaAs(001) substrate using a low-pressure metal organic chemical vapor deposition technique. The valence-band discontinuity for the CuGaSe 2 /CuAlSe 2 heterointerface was estimated to be...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1994-03, Vol.33 (3A), p.L286
Main Authors: Chichibu, Shigefusa, Sudo, Ryo, Yoshida, Nobuhide, Harada, Yoshiyuki, Uchida, Mei, Higuchi, Satoru Matsumoto
Format: Article
Language:English
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Summary:A single-heterostructure of CuGaSe 2 /CuAlSe 2 chalcopyrite semiconductors was successfully grown epitaxially on a GaAs(001) substrate using a low-pressure metal organic chemical vapor deposition technique. The valence-band discontinuity for the CuGaSe 2 /CuAlSe 2 heterointerface was estimated to be 0.8±0.1 eV by means of X-ray photoelectron spectroscopy. The CuGaSe 2 /CuAlSe 2 structure was found to have the straddling-type heterointerface, and the band discontinuity was found to be distributed mainly in the valence band.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.33.L286