Surface preparation effects for molecular beam epitaxial growth of ZnSe layers on InGaP layers

• Published in: Japanese Journal of Applied Physics 1994, Vol.33 (5B), p.L705-L707
• Main Authors: SAITO, S, NISHIKAWA, Y, ONOMURA, M, PARBROOK, P. J, ISHIKAWA, M, HATAKOSHI, G
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Ii-vi semiconductors; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.33.l705

The effect of InGaP surface preparation has been investigated for the molecular beam epitaxial (MBE) growth of ZnSe. The net acceptor concentration profile near the interface of nitrogen-doped p-type ZnSe layers was strongly affected by the surface preparation of InGaP layers. The low net acceptor concentration region for the samples grown on a thermally treated (580°C) or P 2 S 5 -treated InGaP surface was narrower than that region for the sample grown on a surface exposed to neither thermal treatment nor P 2 S 5 treatment. Structures with InGaP buffer layers exposed to the surface treatments outlined here hold much promise for the reduction of the blue-green laser operation voltage.