Ridge Structures Formed on Nd 3 Ga 5 O 12 and Sm 3 Ga 5 O 12 Single Crystal Substrates

Straight ridge patterns are formed in the [1̄ 1̄2] and [1̄10] directions on (111) Nd 3 Ga 5 O 12 (NGG) and Sm 3 Ga 5 O 12 (SGG) single crystal substrates, and in the [001] and [11̄0] directions on a (110) NGG substrate by argon ion-beam etching and subsequent soaking in a hot phosphoric acid solutio...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1994-05, Vol.33 (5B), p.L726
Main Authors: Katoh, Yujiro, Naoto Sugimoto, Naoto Sugimoto, Akiyuki Tate, Akiyuki Tate
Format: Article
Language:English
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Summary:Straight ridge patterns are formed in the [1̄ 1̄2] and [1̄10] directions on (111) Nd 3 Ga 5 O 12 (NGG) and Sm 3 Ga 5 O 12 (SGG) single crystal substrates, and in the [001] and [11̄0] directions on a (110) NGG substrate by argon ion-beam etching and subsequent soaking in a hot phosphoric acid solution. The ridge shapes are observed with a scanning electron microscope (SEM). The crystal faces, which appear on the ridge side walls, are examined. The anisotropic etching in the phosphoric acid solution strongly depends on the ridge direction as well as on the substrate orientation. The indices are similar to those observed for Gd 3 Ga 5 O 12 (GGG).
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.33.L726