Efficient Field Effect in Heavily Doped Thin-Film Diamond Metal-Insulator-Semiconductor Diode Employing BaTiO 3 Insulator Film

Metal-insulator-semiconductor (MIS) structures of heavily doped ( 6–7×10 18 cm -3 ) epitaxial diamond were prepared, which include highly polarizable BaTiO 3 insulator films. They were characterized by capacitance-voltage ( C-V ) and electron-beam-induced-current (EBIC) measurements. Despite the pre...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1994-06, Vol.33 (6B), p.L888
Main Authors: Ariki, Takuya, Shikama, Shozo, Suzuki, Sei, Otsuka, Yuzuru, Tetsuro Maki, Tetsuro Maki, Takeshi Kobayashi, Takeshi Kobayashi
Format: Article
Language:English
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Summary:Metal-insulator-semiconductor (MIS) structures of heavily doped ( 6–7×10 18 cm -3 ) epitaxial diamond were prepared, which include highly polarizable BaTiO 3 insulator films. They were characterized by capacitance-voltage ( C-V ) and electron-beam-induced-current (EBIC) measurements. Despite the presence of background boron of an extremely high concentration, an applied voltage of at most 10 V was sufficient to establish the deep-depletion condition at the diamond surface. The observed EBIC image gave a more direct indication of the efficient field effect in our diamond MIS structures.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.33.L888