Dielectric Properties of SrTiO 3 Thin Films Grown by Ozone-Assisted Molecular Beam Epitaxy

Crystalline SrTiO 3 thin films were fabricated by an ozone-assisted molecular beam epitaxy (MBE) method at a relatively low deposition temperature of around 300° C. These films had high crystallinity, smooth surface and insulating properties with increasing deposition temperature. The relative diele...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1995-04, Vol.34 (4R), p.1906
Main Authors: Nakamura, Takao, Tokuda, Hitoki, Tanaka, So, Michitomo Iiyama, Michitomo Iiyama
Format: Article
Language:English
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Summary:Crystalline SrTiO 3 thin films were fabricated by an ozone-assisted molecular beam epitaxy (MBE) method at a relatively low deposition temperature of around 300° C. These films had high crystallinity, smooth surface and insulating properties with increasing deposition temperature. The relative dielectric constant for a 250-nm-thick SrTiO 3 film deposited at 480° C was 825 at 35 K. This value was comparable to that of SrTiO 3 films, which were deposited at over 650° C by pulsed laser deposition. This film had similar temperature and applied electric field dependence to bulk SrTiO 3 . The electric field-effect evaluation on SrTiO 3 films in the Ag/SrTiO 3 /YBa 2 Cu 3 O 7- x configuration indicated suppression of the SrTiO 3 /YBa 2 Cu 3 O 7- x interface layer.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.34.1906