Low-Noise and High-Power GaAlAs Laser Diodes with a New Real Refractive Index Guided Structure

We demonstrate for the first time a real refractive index guided GaAlAs laser structure that has both very low-noise characteristics at a low output power (reading mode) and a stable fundamental transverse mode up to a high power level (writing mode) sufficient for optical read-write systems. The lo...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1995-07, Vol.34 (7A), p.3533-3542, Article 3533
Main Authors: TAKAYAMA, T, IMAFUJI, O, SUGIURA, H, YURI, M, NAITO, H, KUME, M, ITOH, K
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
laser diodes
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We demonstrate for the first time a real refractive index guided GaAlAs laser structure that has both very low-noise characteristics at a low output power (reading mode) and a stable fundamental transverse mode up to a high power level (writing mode) sufficient for optical read-write systems. The low-noise characteristics are realized by self-sustained pulsation which is induced by large saturable absorbers outside a stripe, and the high power is achieved by using a thin active layer which confines the optical flux very loosely. In order to optimize the device parameters, numerical simulation of the structure is proposed with consideration of interaction between optical field and carrier diffusion under gain nonlinearity and carrier diffusion taken into account. The calculated results are verified experimentally. The lasers showed relative intensity noise level less than -135 dB/Hz under 0-20% optical feedback and output power higher than 60 mW.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.34.3533