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Microstructure and Nonohmic Properties of ZnO-V 2 O 5 Ceramics
The microstructure and nonohmic characteristics of polycrystalline ZnO-V 2 O 5 ceramics with V 2 O 5 as the only additive ranging from 0 to 2 mol% were investigated. An abnormal grain growth was observed for ZnO doped with V 2 O 5 and sintered at 900° C. However, the non-uniformity of the grain stru...
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| Published in: | Japanese Journal of Applied Physics 1995-12, Vol.34 (12R), p.6452 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c802-516c7fe1c754f44cb0f3692c89a7949895e3d0d7bf9162ac07559b8b446b64cc3 |
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| container_issue | 12R |
| container_start_page | 6452 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 34 |
| creator | Tsai, Jyh-Kuang Tai-Bor Wu, Tai-Bor Wu |
| description | The microstructure and nonohmic characteristics of polycrystalline ZnO-V
2
O
5
ceramics with V
2
O
5
as the only additive ranging from 0 to 2 mol% were investigated. An abnormal grain growth was observed for ZnO doped with V
2
O
5
and sintered at 900° C. However, the non-uniformity of the grain structure alleviated with increasing the V
2
O
5
content or sintering temperature. The ZnO-V
2
O
5
ceramics have shown characteristics of nonohmic
V-I
behavior and large apparent dielectric constant with a relaxation peak of 0.36 eV at 300 kHz. The electrical properties of these ZnO-V
2
O
5
ceramics depended strongly on the processing conditions and V
2
O
5
content, and there seems a close relation between the nonlinear electric properties and the concentration of the deeply-trapped defects at 0.36 eV in ZnO. |
| doi_str_mv | 10.1143/JJAP.34.6452 |
| format | article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_34_6452</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1143_JJAP_34_6452</sourcerecordid><originalsourceid>FETCH-LOGICAL-c802-516c7fe1c754f44cb0f3692c89a7949895e3d0d7bf9162ac07559b8b446b64cc3</originalsourceid><addsrcrecordid>eNotj81KxDAYRYMoWEd3PkAewNT8fEmajTAUHR1GO4vBhZuQpglWnHZIOgvf3im6uly4HO5B6JbRkjEQ9-v1clsKKBVIfoYKJkAToEqeo4JSzggYzi_RVc5fp6oksAI9vPY-jXlKRz8dU8Bu6PDbOIyf-97jbRoPIU19yHiM-GNoyDvmuMES1yG50yJfo4vovnO4-c8F2j097upnsmlWL_VyQ3xFOZFMeR0D81pCBPAtjUIZ7ivjtAFTGRlERzvdRsMUd55qKU1btQCqVeC9WKC7P-z8NacQ7SH1e5d-LKN2VrezuhVgZ3XxC-EpShw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Microstructure and Nonohmic Properties of ZnO-V 2 O 5 Ceramics</title><source>Institute of Physics IOPscience extra</source><source>Institute of Physics</source><creator>Tsai, Jyh-Kuang ; Tai-Bor Wu, Tai-Bor Wu</creator><creatorcontrib>Tsai, Jyh-Kuang ; Tai-Bor Wu, Tai-Bor Wu</creatorcontrib><description>The microstructure and nonohmic characteristics of polycrystalline ZnO-V
2
O
5
ceramics with V
2
O
5
as the only additive ranging from 0 to 2 mol% were investigated. An abnormal grain growth was observed for ZnO doped with V
2
O
5
and sintered at 900° C. However, the non-uniformity of the grain structure alleviated with increasing the V
2
O
5
content or sintering temperature. The ZnO-V
2
O
5
ceramics have shown characteristics of nonohmic
V-I
behavior and large apparent dielectric constant with a relaxation peak of 0.36 eV at 300 kHz. The electrical properties of these ZnO-V
2
O
5
ceramics depended strongly on the processing conditions and V
2
O
5
content, and there seems a close relation between the nonlinear electric properties and the concentration of the deeply-trapped defects at 0.36 eV in ZnO.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.34.6452</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1995-12, Vol.34 (12R), p.6452</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c802-516c7fe1c754f44cb0f3692c89a7949895e3d0d7bf9162ac07559b8b446b64cc3</citedby><cites>FETCH-LOGICAL-c802-516c7fe1c754f44cb0f3692c89a7949895e3d0d7bf9162ac07559b8b446b64cc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Tsai, Jyh-Kuang</creatorcontrib><creatorcontrib>Tai-Bor Wu, Tai-Bor Wu</creatorcontrib><title>Microstructure and Nonohmic Properties of ZnO-V 2 O 5 Ceramics</title><title>Japanese Journal of Applied Physics</title><description>The microstructure and nonohmic characteristics of polycrystalline ZnO-V
2
O
5
ceramics with V
2
O
5
as the only additive ranging from 0 to 2 mol% were investigated. An abnormal grain growth was observed for ZnO doped with V
2
O
5
and sintered at 900° C. However, the non-uniformity of the grain structure alleviated with increasing the V
2
O
5
content or sintering temperature. The ZnO-V
2
O
5
ceramics have shown characteristics of nonohmic
V-I
behavior and large apparent dielectric constant with a relaxation peak of 0.36 eV at 300 kHz. The electrical properties of these ZnO-V
2
O
5
ceramics depended strongly on the processing conditions and V
2
O
5
content, and there seems a close relation between the nonlinear electric properties and the concentration of the deeply-trapped defects at 0.36 eV in ZnO.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNotj81KxDAYRYMoWEd3PkAewNT8fEmajTAUHR1GO4vBhZuQpglWnHZIOgvf3im6uly4HO5B6JbRkjEQ9-v1clsKKBVIfoYKJkAToEqeo4JSzggYzi_RVc5fp6oksAI9vPY-jXlKRz8dU8Bu6PDbOIyf-97jbRoPIU19yHiM-GNoyDvmuMES1yG50yJfo4vovnO4-c8F2j097upnsmlWL_VyQ3xFOZFMeR0D81pCBPAtjUIZ7ivjtAFTGRlERzvdRsMUd55qKU1btQCqVeC9WKC7P-z8NacQ7SH1e5d-LKN2VrezuhVgZ3XxC-EpShw</recordid><startdate>19951201</startdate><enddate>19951201</enddate><creator>Tsai, Jyh-Kuang</creator><creator>Tai-Bor Wu, Tai-Bor Wu</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19951201</creationdate><title>Microstructure and Nonohmic Properties of ZnO-V 2 O 5 Ceramics</title><author>Tsai, Jyh-Kuang ; Tai-Bor Wu, Tai-Bor Wu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c802-516c7fe1c754f44cb0f3692c89a7949895e3d0d7bf9162ac07559b8b446b64cc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsai, Jyh-Kuang</creatorcontrib><creatorcontrib>Tai-Bor Wu, Tai-Bor Wu</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsai, Jyh-Kuang</au><au>Tai-Bor Wu, Tai-Bor Wu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microstructure and Nonohmic Properties of ZnO-V 2 O 5 Ceramics</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1995-12-01</date><risdate>1995</risdate><volume>34</volume><issue>12R</issue><spage>6452</spage><pages>6452-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>The microstructure and nonohmic characteristics of polycrystalline ZnO-V
2
O
5
ceramics with V
2
O
5
as the only additive ranging from 0 to 2 mol% were investigated. An abnormal grain growth was observed for ZnO doped with V
2
O
5
and sintered at 900° C. However, the non-uniformity of the grain structure alleviated with increasing the V
2
O
5
content or sintering temperature. The ZnO-V
2
O
5
ceramics have shown characteristics of nonohmic
V-I
behavior and large apparent dielectric constant with a relaxation peak of 0.36 eV at 300 kHz. The electrical properties of these ZnO-V
2
O
5
ceramics depended strongly on the processing conditions and V
2
O
5
content, and there seems a close relation between the nonlinear electric properties and the concentration of the deeply-trapped defects at 0.36 eV in ZnO.</abstract><doi>10.1143/JJAP.34.6452</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1995-12, Vol.34 (12R), p.6452 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_34_6452 |
| source | Institute of Physics IOPscience extra; Institute of Physics |
| title | Microstructure and Nonohmic Properties of ZnO-V 2 O 5 Ceramics |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T17%3A53%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Microstructure%20and%20Nonohmic%20Properties%20of%20ZnO-V%202%20O%205%20Ceramics&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Tsai,%20Jyh-Kuang&rft.date=1995-12-01&rft.volume=34&rft.issue=12R&rft.spage=6452&rft.pages=6452-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.1143/JJAP.34.6452&rft_dat=%3Ccrossref%3E10_1143_JJAP_34_6452%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c802-516c7fe1c754f44cb0f3692c89a7949895e3d0d7bf9162ac07559b8b446b64cc3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |