Relationship between water diffusivity of dielectric films and accelerated hot carrier degradation caused by water

• Published in: Japanese Journal of Applied Physics 1995, Vol.34 (2B), p.965-968
• Main Authors: FUKUDA, K, NAKANO, T, FUJISHIMA, M, MURA, N, TOKUNAGA, K, TSUZUMITANI, A, ICHINOSE, S
• Format: Article
• Language: English
• Subjects: Charge carriers: generation, recombination, lifetime, trapping, mean free paths; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Diffusion in solids; Diffusion of impurities; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Physics; Transport properties of condensed matter (nonelectronic)
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.34.965

The relationship between the water diffusivity of dielectric films evaluated by use of D 2 O and the accelerated hot carrier degradation caused by water is presented. The diffusion coefficient of D 2 O in SiO 2 film deposited by tetraethyl-orthosilicate-based plasma-enhanced chemical vapor deposition (P-TEOS) was about one-tenth that of SiH 4 -based (P-SiO) film. The P-TEOS film showed little capability of blocking water diffusion, while P-SiO film only 200 nm in thickness was sufficient to block the water diffusion as well as to suppress accelerated hot carrier degradation. Analyses of Fourier Transform Infrared Spectroscopy (FT-IR) and Secondary Ion Mass Spectrometry (SIMS) revealed that chemical species of Si-H and Si-NH included in P-SiO film efficiently trapped the diffusing water.