Effect of SC1 process on silicon surface microroughness and oxide breakdown characteristics

Surface microroughness and its effects on dielectric breakdown characteristics have been investigated for silicon wafers treated in SC1-based solutions. Surface microroughness was quantified using atomic force microscopy (AFM) and phase shift interferometry (PSI). In contrast to previous reports tha...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1995, Vol.34 (2A), p.L153-L155
Main Authors: AKIYAMA, K, NAITO, N, NAGAMORI, M, KOYA, H, MORITA, E, SASSA, K, SUGA, H
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Dielectric breakdown and space-charge effects
Dielectric properties of solids and liquids
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface structure and topography
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Surface microroughness and its effects on dielectric breakdown characteristics have been investigated for silicon wafers treated in SC1-based solutions. Surface microroughness was quantified using atomic force microscopy (AFM) and phase shift interferometry (PSI). In contrast to previous reports that SC1 treatment caused undulation of the surface, our observation showed a nominal amount of deterioration. Even prolonged dipping in a solution with high etching rate did not roughen the surface, and the dielectric breakdown characteristics were not affected.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.L153