InAsP/InGaP all-ternary strain-compensated multiple quantum wells and their application to long-wavelength lasers

By introducing InGaP tensile-strained layers as barriers of InAsP compressively strained multiple quantum wells, InAsP/InGaP strain-compensated multiple quantum wells with high crystalline quality were successfully grown by metalorganic chemical vapor deposition. For the first time, a laser, emittin...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1995-08, Vol.34 (8A), p.L965-L967
Main Authors: KASUKAWA, A, YOKOUCHI, N, YAMANAKA, N, IWAI, N, MATSUDA, T
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
laser diodes
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Summary:By introducing InGaP tensile-strained layers as barriers of InAsP compressively strained multiple quantum wells, InAsP/InGaP strain-compensated multiple quantum wells with high crystalline quality were successfully grown by metalorganic chemical vapor deposition. For the first time, a laser, emitting at 1.2 µ m, consisting of all-ternary quantum wells as an active layer was fabricated. The threshold current density of 1 kA/cm 2 was obtained without the use of a separate confinement heterostructure layer for a cavity length of 1000 µ m.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.34.l965