Valence band modulation in InGaAs/InAlAs superlattices with tensilely strained wells grown on InGaAs quasi-substrate on GaAs

We have studied structural and optical properties of strained InGaAs/InAlAs superlattices grown on an InGaAs quasi-substrate on GaAs by X-ray diffraction measurement, photoluminescence and photocurrent spectroscopy. The measurements were performed for two sample groups: one was Wannier-Stark type su...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996-02, Vol.35 (2B), p.1209-1213
Main Authors: TOMINAGA, K, HOSODA, M, WATANABE, T, FUJIWARA, K
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have studied structural and optical properties of strained InGaAs/InAlAs superlattices grown on an InGaAs quasi-substrate on GaAs by X-ray diffraction measurement, photoluminescence and photocurrent spectroscopy. The measurements were performed for two sample groups: one was Wannier-Stark type superlattices (SLs) with thin barriers and the other was quantum confined Stark effect type SLs with relatively thick barriers. In each group, we have obtained ample evidence for modulation effects on the SLs' band structure by tensile strain, which is controlled by the lattice constant of the InGaAs quasi-substrate.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.35.1209