Optical characterization of InAs quantum dots fabricated by molecular beam epitaxy

Optical characterization were performed on patterned InAs dots based on InAs/InAlAs hetero-structure and the self-assembled InAs dots grown on GaAs. Unexpectedly high peak energy shift in photoluminescence (PL) and cathodoluminescence (CL) was observed from InAs dots based on InAs/InAlAs heterostruc...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996, Vol.35 (2B), p.1217-1220
Main Authors: SAITOH, T, TAKEUCHI, H, KONDA, J, YOH, K
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Optical characterization were performed on patterned InAs dots based on InAs/InAlAs hetero-structure and the self-assembled InAs dots grown on GaAs. Unexpectedly high peak energy shift in photoluminescence (PL) and cathodoluminescence (CL) was observed from InAs dots based on InAs/InAlAs heterostructure. PL results of self assembled InAs dots grown on GaAs also showed unexpectedly high peak energy. CL spectra from each single InAs dot suggested luminescence from highly strained dots contribute to shift the average luminescence peak towards higher energy. The high PL peak energy from the self-assembled InAs dots turned out to be composed of strain-induced band-gap widening (28%), carrier confinement effect (17%) in addition to unstrained band-gap energy (29%). 26% of the total PL peak energy remained unassigned.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.35.1217