Study of Zinc-Delta-Doped Strained Quantum Well InGaAs/GaAs p-Channel Heterostructure Field-Effect Transistors

Zinc-delta-doped strained quantum well InGaAs/GaAs p-channel heterostructure field-effect transistor (HFET) grown by low-pressure metalorganic chemical vapor deposition has been realized. In terms of using the zinc-delta-doping technique by interrupting the growth, high concentration is carried out....

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996, Vol.35 (4R), p.2085
Main Authors: Hsu, Rong Tay, Hsu, Wei Chou, Wang, Jiann Shiun, Kao, Ming Jer, Yu Huei Wu, Yu Huei Wu, Jan Shing Su, Jan Shing Su
Format: Article
Language:English
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Summary:Zinc-delta-doped strained quantum well InGaAs/GaAs p-channel heterostructure field-effect transistor (HFET) grown by low-pressure metalorganic chemical vapor deposition has been realized. In terms of using the zinc-delta-doping technique by interrupting the growth, high concentration is carried out. The influence of spacer layer thickness on two-dimensional hole gas concentration and hole mobility is also studied. The delta-doped p-type strained InGaAs/GaAs HFET with 8 nm spacer layer thickness exhibits extrinsic transconductances of 15 mS/mm at 300 K and 24 mS/mm at 77 K. Secondary-ion mass spectrometry (SIMS) is carried out to confirm the film quality, zinc diffusion profile and sharpness of the proposed structures. Due to the smaller mobility difference in InGaAs/GaAs than in using AlGaAs barriers, the gate voltage swing in the p-channel delta-doped InGaAs/GaAs HFET exhibits a value about 1.7 V. Consequently, a wider linear amplifier application is expected in the present device.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.35.2085