Characterization of a DC arcjet plasma for diamond growth by measurement of spatial distributions of optical emission

A DC arcjet plasma for diamond growth was characterized by the in-situ measurement of spatial distributions of the optical emission from atomic hydrogen, C 2 , CH and Ar. For H and C 2 radicals, the distributions of the emission in front of a substrate were found to correlate well with the profiles...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996, Vol.35 (4A), p.2306-2313
Main Authors: YAMAGUCHI, H, ISHII, M, UEMATSU, K, MORIMOTO, S
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Optical (ultraviolet, visible, infrared) measurements
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Plasma applications
Plasma diagnostic techniques and instrumentation
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Summary:A DC arcjet plasma for diamond growth was characterized by the in-situ measurement of spatial distributions of the optical emission from atomic hydrogen, C 2 , CH and Ar. For H and C 2 radicals, the distributions of the emission in front of a substrate were found to correlate well with the profiles of the diamond film thickness and the film morphology with the change in background pressure and substrate position. The deposition conditions under which H emission was suppressed and C 2 emission was enhanced promoted diamond growth. The profiles of the diamond film thickness could be predicted from the radial distributions of H and C 2 emission in front of the substrate.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.35.2306