Crystal and Electrical Characterizations of Epitaxial Ce X Zr 1-X O 2 Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor

• Published in: Japanese Journal of Applied Physics 1996-09, Vol.35 (9S), p.5150
• Main Authors: Hirai, Tadahiko, Nagashima, Kazuhito, Koike, Hiroshi, Matsuno, Shinya, Yasuo Tarui, Yasuo Tarui
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.35.5150

We evaluated the crystallinities of Ce X Zr 1- X O 2 ( X =0.10–0.20) thin films used as intermediate layer for metal/ferroelectric/insulator/semiconductor field effect transistors (MFIS-FETs), using reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) and X-ray pole figure measurement. The crystal alignments of Ce X Zr 1- X O 2 films on Si(100) were Ce X Zr 1- X O 2 [100]//Si[100] or Ce X Zr 1- X O 2 [100]//Si[001], in the plane. The breakdown field of Ce X Zr 1- X O 2 was about 3 MV/cm (at I =1 nA/cm 2 ). From C-V measurements, it was found that the electrical properties of the intermediate layers of the MFIS-FETs were good. Oriented perovskite PbTiO 3 films were deposited on Ce X Zr 1- X O 2 /Si(100) substrates by digital chemical vapor deposition (CVD). These PbTiO 3 films included many PbTiO 3 grains aligned with the [100] or [001] axis parallel to the [101] axis of the Ce X Zr 1- X O 2 crystals at the plane in the PbTiO 3 /Ce X Zr 1- X O 2 interface. From C-V measurements of an Al/PbTiO 3 /Ce X Zr 1- X O 2 /Si(100) sample, we obtained a threshold hysteresis (memory window) of about 1.4 V.