X-ray reflectometry and infrared analysis of native oxides on Si(100) formed by chemical treatment

• Published in: Japanese Journal of Applied Physics 1996-10, Vol.35 (10), p.5437-5443
• Main Authors: SUGITA, Y, WATANABE, S, AWAJI, N
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other interactions of matter with particles and radiation; Oxidation; Physics; Surface treatments; X-ray absorption and absorption edges; X-ray absorption spectra
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.35.5437

We investigated native-oxide formation on Si(100) in some cleaning solutions. The macroscopic density and thickness of the native oxides were determined by glancing incidence X-ray reflectometry (GIXR). The chemical structures were revealed by Fourier transform infrared (FT-IR) analysis and compared with the macroscopic parameters. Low density and chemical imperfections were found in oxides formed in some chemical solutions ( HCl/H 2 O 2 , NH 4 OH/H 2 O 2 and HNO 3 solutions). The films with the most chemically homogeneous and densest oxide were prepared using H 2 SO 4 /H 2 O 2 solution and ozonized water. The variations of the chemical structures were correlatively well explained in term of macroscopic parameters. We discuss the possible physical structures of native oxides based on the results of our experiments, as well as previous observations.