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X-ray reflectometry and infrared analysis of native oxides on Si(100) formed by chemical treatment

We investigated native-oxide formation on Si(100) in some cleaning solutions. The macroscopic density and thickness of the native oxides were determined by glancing incidence X-ray reflectometry (GIXR). The chemical structures were revealed by Fourier transform infrared (FT-IR) analysis and compared...

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Published in:Japanese Journal of Applied Physics 1996-10, Vol.35 (10), p.5437-5443
Main Authors: SUGITA, Y, WATANABE, S, AWAJI, N
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description We investigated native-oxide formation on Si(100) in some cleaning solutions. The macroscopic density and thickness of the native oxides were determined by glancing incidence X-ray reflectometry (GIXR). The chemical structures were revealed by Fourier transform infrared (FT-IR) analysis and compared with the macroscopic parameters. Low density and chemical imperfections were found in oxides formed in some chemical solutions ( HCl/H 2 O 2 , NH 4 OH/H 2 O 2 and HNO 3 solutions). The films with the most chemically homogeneous and densest oxide were prepared using H 2 SO 4 /H 2 O 2 solution and ozonized water. The variations of the chemical structures were correlatively well explained in term of macroscopic parameters. We discuss the possible physical structures of native oxides based on the results of our experiments, as well as previous observations.
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source IOPscience journals; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other interactions of matter with particles and radiation
Oxidation
Physics
Surface treatments
X-ray absorption and absorption edges
X-ray absorption spectra
title X-ray reflectometry and infrared analysis of native oxides on Si(100) formed by chemical treatment
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