Epitaxial Stress Effect on Crystallographic Properties of Bi 4 Ti 3 O 12 Heterostructures and Their Leakage Current Behaviors

Three dimensionally aligned epitaxial Bi 4 Ti 3 O 12 films were grown on SrTiO 3 (001) and LaAlO 3 (001) substrates with and without a semiconductive La 2 CuO 4 bottom layer. The leakage current and crystallographic properties of Bi 4 Ti 3 O 12 were found to be markedly different from ABO 3 -type fe...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996-11, Vol.35 (11R), p.5745
Main Authors: Watanabe, Yukio, Matsumoto, Yasuaki, Tanamura, Mitsuru
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Three dimensionally aligned epitaxial Bi 4 Ti 3 O 12 films were grown on SrTiO 3 (001) and LaAlO 3 (001) substrates with and without a semiconductive La 2 CuO 4 bottom layer. The leakage current and crystallographic properties of Bi 4 Ti 3 O 12 were found to be markedly different from ABO 3 -type ferroelectric such as Pb(Zr, Ti)O 3 , BaTiO 3 , and SrTiO 3 . The d-spacings of Bi 4 Ti 3 O 12 depend markedly on the substrate material, suggesting that the amount of misoriented domains formed to relieve epitaxial stress was less than that in ABO 3 -type ferroelectrics. This epitaxial stress effect was observed even in relatively thick films 1500 Å thick. Furthermore, the time dependence of the leakage current in Bi 4 Ti 3 O 12 was substantially reduced compared to those in the ABO 3 -type ferroelectrics.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.35.5745