Electroluminescence and avalanche multiplication at electric field strength exceeding 1 MV/cm in hydrogenated amorphous SiC alloy

High electric field effects in hydrogenated amorphous silicon carbide alloy have been investigated employing a double insulating ac-driven electroluminescent device structure. The carbon content was systematically varied by changing the deposition conditions. Hot-electron-induced electroluminescence...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996, Vol.35 (12A), p.5975-5979
Main Authors: TOYAMA, T, MATSUI, T, HIRATSUKA, K, OKAMOTO, H, HAMAKAWA, Y
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:High electric field effects in hydrogenated amorphous silicon carbide alloy have been investigated employing a double insulating ac-driven electroluminescent device structure. The carbon content was systematically varied by changing the deposition conditions. Hot-electron-induced electroluminescence and avalanche multiplication occurred at an electric field of 1.4–2.3 MV/cm in amorphous silicon carbide as in hydrogenated amorphous silicon. From an analysis of the decay of the emission spectrum in terms of the lucky-drift model, the electron mean free path tends to be reduced with an increase in structural disorder due to carbon alloying.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.35.5975