Defects in ion-implanted 3C-SiC probed by a monoenergetic positron beam

Defects introduced by 200-keV N 2 + - or Al + -implantation into 3C–SiC were probed by a monoenergetic positron beam. Depth profiles of the defects were determined from measurements of Doppler broadening profiles of the annihilation radiation as a function of incident positron energy. For ion implan...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996-12, Vol.35 (12A), p.5986-5990
Main Authors: UEDONO, A, ITOH, H, TANIGAWA, S, OHSHIMA, T, AOKI, Y, YOSHIKAWA, M, NASHIYAMA, I, OKUMURA, H, YOSHIDA, S, MORIYA, T, KAWANO, T
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Testing, measurement, noise and reliability
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Summary:Defects introduced by 200-keV N 2 + - or Al + -implantation into 3C–SiC were probed by a monoenergetic positron beam. Depth profiles of the defects were determined from measurements of Doppler broadening profiles of the annihilation radiation as a function of incident positron energy. For ion implanted specimens at high substrate temperature (≥800° C), the major species of defects was identified to be vacancy clusters. The depth profile of vacancy-type defects was found to be shifted towards the surface of the specimen by implantation at high temperatures. Upon furnace annealing after the implantation, an agglomeration of vacancy-type defects was observed, and interstitial clusters were introduced below the vacancy-rich region.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.35.5986