Contamination charging up effect in a variably shaped electron beam writer

We investigated the beam drift on the second shaping aperture caused by the charging up of contamination layers on shaping deflector surfaces in an EX-8D variably shaped beam (VSB) writer. A surface charging model which is based on the movement of the secondary electron (SE) charge-up area in a defl...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996, Vol.35 (12B), p.6426-6428
Main Authors: ANDO, A, SUNAOSHI, H, SATO, S, MAGOSHI, S, HATTORI, K, SUENAGA, M, WADA, H, HOUSAI, H, HASHIMOTO, S, SUGIHARA, K
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigated the beam drift on the second shaping aperture caused by the charging up of contamination layers on shaping deflector surfaces in an EX-8D variably shaped beam (VSB) writer. A surface charging model which is based on the movement of the secondary electron (SE) charge-up area in a deflector in response to the direction and strength of the field was adapted to explain the beam drift phenomenon. It was found that SE charge-up causes the beam drift and its amount depends on the amount of SEs moving between the electrodes. It was also found that by removing the contamination layers using a downflow cleaning process the beam drift is significantly reduced even if SEs move between the electrodes.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.35.6426