Focused ion beam lithography using ladder silicone spin-on glass as a positive resist

Focused ion beam lithography using ladder silicone spin-on glass as a positive resist has been demonstrated. This lithographic technique utilizes the structural change of ladder silicone spin-on glass (LS-SOG) to a silicon-dioxide-like structure. A 60-nm-width space pattern and a 90-nm-diameter hole...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996-12, Vol.35 (12B), p.6517-6520
Main Authors: SUZUKI, K, YAMASHITA, M, KAWAKAMI, N, NAKAUE, A
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Focused ion beam lithography using ladder silicone spin-on glass as a positive resist has been demonstrated. This lithographic technique utilizes the structural change of ladder silicone spin-on glass (LS-SOG) to a silicon-dioxide-like structure. A 60-nm-width space pattern and a 90-nm-diameter hole pattern have been fabricated using ion doses of 6.2×10 13 / cm 2 and 1.2×10 14 / cm 2 , respectively. The development mechanism and the sensitizing effect of post-exposure baking have been investigated using fourier transform infrared spectroscopy (FTIR).
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.35.6517