SiO 2 /c-Si Bilayer Electron-Beam Resist Process for Nano-Fabrication

We have developed an SiO 2 /c-Si bilayer electron beam resist process in order to overcome the problems encountered in our previously developed SiO 2 /poly-Si resist system. The process parameters which include the electron beam exposure conditions, thicknesses of resist layers, etching of SiO 2 and...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996-12, Vol.35 (12S), p.6673
Main Authors: Gorwadkar, Sucheta M., Wada, Toshimi, Haraichi, Satoshi, Hiroshima, Hiroshi, Kenichi Ishii, Kenichi Ishii, Masanori Komuro, Masanori Komuro
Format: Article
Language:English
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Summary:We have developed an SiO 2 /c-Si bilayer electron beam resist process in order to overcome the problems encountered in our previously developed SiO 2 /poly-Si resist system. The process parameters which include the electron beam exposure conditions, thicknesses of resist layers, etching of SiO 2 and c-Si by using buffered HF solution and NMD-3 solution, respectively, are optimized. The developed SiO 2 /c-Si EB resist system is used to produce a suspended mask structure with an opening of 12 nm width for the double angle deposition of Ti for our proposed ultrasmall metal-insulator-metal tunnel junction fabrication process. We have also demonstrated the successful lift-off of inorganic resist by removing underlying c-Si layer of 40 ×40 µ m 2 area using NMD-3 solution at 70° C, leaving an array of isolated Ti–TiO x –Ti dots, each having few hundred nm 2 area, on the substrate.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.35.6673