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SiO 2 /c-Si Bilayer Electron-Beam Resist Process for Nano-Fabrication
We have developed an SiO 2 /c-Si bilayer electron beam resist process in order to overcome the problems encountered in our previously developed SiO 2 /poly-Si resist system. The process parameters which include the electron beam exposure conditions, thicknesses of resist layers, etching of SiO 2 and...
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| Published in: | Japanese Journal of Applied Physics 1996-12, Vol.35 (12S), p.6673 |
|---|---|
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
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| cited_by | cdi_FETCH-LOGICAL-c803-fe165f40129195ad83fff886ad0a904088a82422c0a560fb708aae2f4efcdc543 |
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| cites | cdi_FETCH-LOGICAL-c803-fe165f40129195ad83fff886ad0a904088a82422c0a560fb708aae2f4efcdc543 |
| container_end_page | |
| container_issue | 12S |
| container_start_page | 6673 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 35 |
| creator | Gorwadkar, Sucheta M. Wada, Toshimi Haraichi, Satoshi Hiroshima, Hiroshi Kenichi Ishii, Kenichi Ishii Masanori Komuro, Masanori Komuro |
| description | We have developed an SiO
2
/c-Si bilayer electron beam resist process in order to overcome the problems encountered in our previously developed SiO
2
/poly-Si resist system. The process parameters which include the electron beam exposure conditions, thicknesses of resist layers, etching of SiO
2
and c-Si by using buffered HF solution and NMD-3 solution, respectively, are optimized. The developed SiO
2
/c-Si EB resist system is used to produce a suspended mask structure with an opening of 12 nm width for the double angle deposition of Ti for our proposed ultrasmall metal-insulator-metal tunnel junction fabrication process. We have also demonstrated the successful lift-off of inorganic resist by removing underlying c-Si layer of 40 ×40 µ m
2
area using NMD-3 solution at 70° C, leaving an array of isolated Ti–TiO
x
–Ti dots, each having few hundred nm
2
area, on the substrate. |
| doi_str_mv | 10.1143/JJAP.35.6673 |
| format | article |
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2
/c-Si bilayer electron beam resist process in order to overcome the problems encountered in our previously developed SiO
2
/poly-Si resist system. The process parameters which include the electron beam exposure conditions, thicknesses of resist layers, etching of SiO
2
and c-Si by using buffered HF solution and NMD-3 solution, respectively, are optimized. The developed SiO
2
/c-Si EB resist system is used to produce a suspended mask structure with an opening of 12 nm width for the double angle deposition of Ti for our proposed ultrasmall metal-insulator-metal tunnel junction fabrication process. We have also demonstrated the successful lift-off of inorganic resist by removing underlying c-Si layer of 40 ×40 µ m
2
area using NMD-3 solution at 70° C, leaving an array of isolated Ti–TiO
x
–Ti dots, each having few hundred nm
2
area, on the substrate.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.35.6673</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1996-12, Vol.35 (12S), p.6673</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c803-fe165f40129195ad83fff886ad0a904088a82422c0a560fb708aae2f4efcdc543</citedby><cites>FETCH-LOGICAL-c803-fe165f40129195ad83fff886ad0a904088a82422c0a560fb708aae2f4efcdc543</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Gorwadkar, Sucheta M.</creatorcontrib><creatorcontrib>Wada, Toshimi</creatorcontrib><creatorcontrib>Haraichi, Satoshi</creatorcontrib><creatorcontrib>Hiroshima, Hiroshi</creatorcontrib><creatorcontrib>Kenichi Ishii, Kenichi Ishii</creatorcontrib><creatorcontrib>Masanori Komuro, Masanori Komuro</creatorcontrib><title>SiO 2 /c-Si Bilayer Electron-Beam Resist Process for Nano-Fabrication</title><title>Japanese Journal of Applied Physics</title><description>We have developed an SiO
2
/c-Si bilayer electron beam resist process in order to overcome the problems encountered in our previously developed SiO
2
/poly-Si resist system. The process parameters which include the electron beam exposure conditions, thicknesses of resist layers, etching of SiO
2
and c-Si by using buffered HF solution and NMD-3 solution, respectively, are optimized. The developed SiO
2
/c-Si EB resist system is used to produce a suspended mask structure with an opening of 12 nm width for the double angle deposition of Ti for our proposed ultrasmall metal-insulator-metal tunnel junction fabrication process. We have also demonstrated the successful lift-off of inorganic resist by removing underlying c-Si layer of 40 ×40 µ m
2
area using NMD-3 solution at 70° C, leaving an array of isolated Ti–TiO
x
–Ti dots, each having few hundred nm
2
area, on the substrate.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNot0L1OwzAYhWELgUQobFyALwCnn3_jjG2VAlVFK9o9-urYklGaIDtL7x4qmI7e5QwPIc8cSs6VnG82i30pdWlMJW9IwaWqmAKjb0kBIDhTtRD35CHnr980WvGCNIe4o4LOHTtEuow9XnyiTe_dlMaBLT2e6afPMU90n0bnc6ZhTPQDh5Gt8ZSiwymOwyO5C9hn__S_M3JcN8fVG9vuXt9Xiy1zFiQLnhsdFHBR81pjZ2UIwVqDHWANCqxFK5QQDlAbCKcKLKIXQfngOqeVnJGXv1uXxpyTD-13imdMl5ZDexVorwKt1O1VQP4A15dMww</recordid><startdate>19961201</startdate><enddate>19961201</enddate><creator>Gorwadkar, Sucheta M.</creator><creator>Wada, Toshimi</creator><creator>Haraichi, Satoshi</creator><creator>Hiroshima, Hiroshi</creator><creator>Kenichi Ishii, Kenichi Ishii</creator><creator>Masanori Komuro, Masanori Komuro</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19961201</creationdate><title>SiO 2 /c-Si Bilayer Electron-Beam Resist Process for Nano-Fabrication</title><author>Gorwadkar, Sucheta M. ; Wada, Toshimi ; Haraichi, Satoshi ; Hiroshima, Hiroshi ; Kenichi Ishii, Kenichi Ishii ; Masanori Komuro, Masanori Komuro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c803-fe165f40129195ad83fff886ad0a904088a82422c0a560fb708aae2f4efcdc543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gorwadkar, Sucheta M.</creatorcontrib><creatorcontrib>Wada, Toshimi</creatorcontrib><creatorcontrib>Haraichi, Satoshi</creatorcontrib><creatorcontrib>Hiroshima, Hiroshi</creatorcontrib><creatorcontrib>Kenichi Ishii, Kenichi Ishii</creatorcontrib><creatorcontrib>Masanori Komuro, Masanori Komuro</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gorwadkar, Sucheta M.</au><au>Wada, Toshimi</au><au>Haraichi, Satoshi</au><au>Hiroshima, Hiroshi</au><au>Kenichi Ishii, Kenichi Ishii</au><au>Masanori Komuro, Masanori Komuro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>SiO 2 /c-Si Bilayer Electron-Beam Resist Process for Nano-Fabrication</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1996-12-01</date><risdate>1996</risdate><volume>35</volume><issue>12S</issue><spage>6673</spage><pages>6673-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>We have developed an SiO
2
/c-Si bilayer electron beam resist process in order to overcome the problems encountered in our previously developed SiO
2
/poly-Si resist system. The process parameters which include the electron beam exposure conditions, thicknesses of resist layers, etching of SiO
2
and c-Si by using buffered HF solution and NMD-3 solution, respectively, are optimized. The developed SiO
2
/c-Si EB resist system is used to produce a suspended mask structure with an opening of 12 nm width for the double angle deposition of Ti for our proposed ultrasmall metal-insulator-metal tunnel junction fabrication process. We have also demonstrated the successful lift-off of inorganic resist by removing underlying c-Si layer of 40 ×40 µ m
2
area using NMD-3 solution at 70° C, leaving an array of isolated Ti–TiO
x
–Ti dots, each having few hundred nm
2
area, on the substrate.</abstract><doi>10.1143/JJAP.35.6673</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1996-12, Vol.35 (12S), p.6673 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_35_6673 |
| source | Institute of Physics IOPscience extra; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
| title | SiO 2 /c-Si Bilayer Electron-Beam Resist Process for Nano-Fabrication |
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