Fabrication of P-channel MOS TFT's on rapid thermal CVD polycrystalline silicon-germanium films

P-channel metal-oxide-semiconductor (PMOS) thin-film transistors (TFT's) have been fabricated on rapid thermal chemical vapor deposition (RTCVD) polycrystalline silicon-germanium (poly-Si 0.82 Ge 0.18 ) films for the first time. The transistors with a channel length of 1.5 µm exhibit good elect...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996-02, Vol.35 (2B), p.919-922
Main Authors: LEE, S.-K, KIM, H.-G, CHUNG, W.-J, KANG, B.-K, KIM, O
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Description
Summary:P-channel metal-oxide-semiconductor (PMOS) thin-film transistors (TFT's) have been fabricated on rapid thermal chemical vapor deposition (RTCVD) polycrystalline silicon-germanium (poly-Si 0.82 Ge 0.18 ) films for the first time. The transistors with a channel length of 1.5 µm exhibit good electrical characteristics. The device performance is degraded in proportion to oxygen content, based on measurements using secondary ion mass spectrometry (SIMS). After electron cyclotron resonance (ECR) plasma hydrogenation under optimal conditions, the density of trap states is markedly decreased in short-channel devices, resulting in relatively low leakage current (∼12.1pA/µm) and high field-effect hole mobility (∼13.4cm 2 /V·s).
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.35.919