Chemical and Structural Characterization of Cu(In,Ga)Se 2 /Mo Interface in Cu(In,Ga)Se 2 Solar Cells

Interfaces between the Cu(In,Ga)Se 2 (CIGS) absorber and the Mo back contact in CIGS solar cells were investigated by secondary ion mass spectroscopy (SIMS) and analytical transmission electron microscopy (TEM). The solar cell with MgF 2 /ITO/ZnO/CdS/CIGS/Mo/glass structure exhibited an efficiency o...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996-10, Vol.35 (10A), p.L1253
Main Authors: Wada, Takahiro, Kohara, Naoki, Takayuki Negami, Takayuki Negami, Mikihiko Nishitani, Mikihiko Nishitani
Format: Article
Language:English
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Summary:Interfaces between the Cu(In,Ga)Se 2 (CIGS) absorber and the Mo back contact in CIGS solar cells were investigated by secondary ion mass spectroscopy (SIMS) and analytical transmission electron microscopy (TEM). The solar cell with MgF 2 /ITO/ZnO/CdS/CIGS/Mo/glass structure exhibited an efficiency of over 15%. In the SIMS depth profile, the Se intensity had a peak at the CIGS/Mo interface. Cross-sectional TEM observation showed that there were two layers at the interface. One was a MoSe 2 layer and the other was an amorphous layer. The thickness of the interface layers depends on the deposition conditions of the Mo layers.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.35.L1253