Emission characteristics of the molybdenum-coated silicon field emitter array

Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on volta...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996-10, Vol.35 (10A), p.L1301-L1304
Main Authors: PARK, H.-W, JU, B.-K, LEE, Y.-H, PARK, J.-H, OH, M.-H
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Vacuum microelectronics
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Summary:Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35 V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.35.L1301