Study of a length coefficient for an extended drift-diffusion model for metal-oxide-semiconductor (MOS) device simulation

A length coefficient for an extended/augmented drift-diffusion model for device simulation was extracted under an exponentially increasing electric field using a multi-valley-band Monte Carlo simulator. The length coefficient increases with electric field and tends to saturate at 0.026 µm, which is...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996-11, Vol.35 (11A), p.L1398
Main Authors: SONODA, K.-I, KANNO, K, TANIGUCHI, K, HAMAGUCHI, C
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:A length coefficient for an extended/augmented drift-diffusion model for device simulation was extracted under an exponentially increasing electric field using a multi-valley-band Monte Carlo simulator. The length coefficient increases with electric field and tends to saturate at 0.026 µm, which is half of the previously reported value [Appl. Phys. Lett. 52 (1988) 141]. It was also shown that the coefficient is independent of the low-field mobility.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.35.l1398