Study of a length coefficient for an extended drift-diffusion model for metal-oxide-semiconductor (MOS) device simulation

A length coefficient for an extended/augmented drift-diffusion model for device simulation was extracted under an exponentially increasing electric field using a multi-valley-band Monte Carlo simulator. The length coefficient increases with electric field and tends to saturate at 0.026 µm, which is...

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Published in:Japanese Journal of Applied Physics 1996-11, Vol.35 (11A), p.L1398
Main Authors: SONODA, K.-I, KANNO, K, TANIGUCHI, K, HAMAGUCHI, C
Format: Article
Language:English
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Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_issue 11A
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container_title Japanese Journal of Applied Physics
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KANNO, K
TANIGUCHI, K
HAMAGUCHI, C
description A length coefficient for an extended/augmented drift-diffusion model for device simulation was extracted under an exponentially increasing electric field using a multi-valley-band Monte Carlo simulator. The length coefficient increases with electric field and tends to saturate at 0.026 µm, which is half of the previously reported value [Appl. Phys. Lett. 52 (1988) 141]. It was also shown that the coefficient is independent of the low-field mobility.
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fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_35_L1398</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2502582</sourcerecordid><originalsourceid>FETCH-LOGICAL-c311t-6cddc99f3a855adaec1f1a16ae7223d772464b050adcbdeb9a79cfb2faf6c06c3</originalsourceid><addsrcrecordid>eNo9kLtPwzAYxC0EEqUwsntggMHFjzhpxqriVRUVqTBHX-zP4CqPKnZQ-9-TUsR0Ot3vbjhCrgWfCJGo-80GthOlJ5VQ-fSEjIRKMpbwVJ-SEedSsCSX8pxchLAZbKoTMSL7deztnraOAq2w-Yxf1LTonDcem0hd21FoKO4iNhYttZ13kVnvXB9829C6tVj9UjVGqFi78xZZwNqbtrG9iUNy-7pa31GL394gDb7uK4hD95KcOagCXv3pmHw8PrzPn9ly9fQyny2ZUUJElhprTZ47BVOtwQIa4QSIFDCTUtksk0malFxzsKa0WOaQ5caV0oFLDU-NGhN23DVdG0KHrth2voZuXwheHH4rFovZW6F0sTz8NvA3R34LwUDlOmiMD_8lqbnUU6l-AM9fcU8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Study of a length coefficient for an extended drift-diffusion model for metal-oxide-semiconductor (MOS) device simulation</title><source>Institute of Physics IOP Science Extra</source><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>SONODA, K.-I ; KANNO, K ; TANIGUCHI, K ; HAMAGUCHI, C</creator><creatorcontrib>SONODA, K.-I ; KANNO, K ; TANIGUCHI, K ; HAMAGUCHI, C</creatorcontrib><description>A length coefficient for an extended/augmented drift-diffusion model for device simulation was extracted under an exponentially increasing electric field using a multi-valley-band Monte Carlo simulator. The length coefficient increases with electric field and tends to saturate at 0.026 µm, which is half of the previously reported value [Appl. Phys. Lett. 52 (1988) 141]. It was also shown that the coefficient is independent of the low-field mobility.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.35.l1398</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>Japanese Journal of Applied Physics, 1996-11, Vol.35 (11A), p.L1398</ispartof><rights>1997 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c311t-6cddc99f3a855adaec1f1a16ae7223d772464b050adcbdeb9a79cfb2faf6c06c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=2502582$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SONODA, K.-I</creatorcontrib><creatorcontrib>KANNO, K</creatorcontrib><creatorcontrib>TANIGUCHI, K</creatorcontrib><creatorcontrib>HAMAGUCHI, C</creatorcontrib><title>Study of a length coefficient for an extended drift-diffusion model for metal-oxide-semiconductor (MOS) device simulation</title><title>Japanese Journal of Applied Physics</title><description>A length coefficient for an extended/augmented drift-diffusion model for device simulation was extracted under an exponentially increasing electric field using a multi-valley-band Monte Carlo simulator. The length coefficient increases with electric field and tends to saturate at 0.026 µm, which is half of the previously reported value [Appl. Phys. Lett. 52 (1988) 141]. It was also shown that the coefficient is independent of the low-field mobility.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1996</creationdate><recordtype>article</recordtype><recordid>eNo9kLtPwzAYxC0EEqUwsntggMHFjzhpxqriVRUVqTBHX-zP4CqPKnZQ-9-TUsR0Ot3vbjhCrgWfCJGo-80GthOlJ5VQ-fSEjIRKMpbwVJ-SEedSsCSX8pxchLAZbKoTMSL7deztnraOAq2w-Yxf1LTonDcem0hd21FoKO4iNhYttZ13kVnvXB9829C6tVj9UjVGqFi78xZZwNqbtrG9iUNy-7pa31GL394gDb7uK4hD95KcOagCXv3pmHw8PrzPn9ly9fQyny2ZUUJElhprTZ47BVOtwQIa4QSIFDCTUtksk0malFxzsKa0WOaQ5caV0oFLDU-NGhN23DVdG0KHrth2voZuXwheHH4rFovZW6F0sTz8NvA3R34LwUDlOmiMD_8lqbnUU6l-AM9fcU8</recordid><startdate>19961101</startdate><enddate>19961101</enddate><creator>SONODA, K.-I</creator><creator>KANNO, K</creator><creator>TANIGUCHI, K</creator><creator>HAMAGUCHI, C</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19961101</creationdate><title>Study of a length coefficient for an extended drift-diffusion model for metal-oxide-semiconductor (MOS) device simulation</title><author>SONODA, K.-I ; KANNO, K ; TANIGUCHI, K ; HAMAGUCHI, C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c311t-6cddc99f3a855adaec1f1a16ae7223d772464b050adcbdeb9a79cfb2faf6c06c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SONODA, K.-I</creatorcontrib><creatorcontrib>KANNO, K</creatorcontrib><creatorcontrib>TANIGUCHI, K</creatorcontrib><creatorcontrib>HAMAGUCHI, C</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SONODA, K.-I</au><au>KANNO, K</au><au>TANIGUCHI, K</au><au>HAMAGUCHI, C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of a length coefficient for an extended drift-diffusion model for metal-oxide-semiconductor (MOS) device simulation</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1996-11-01</date><risdate>1996</risdate><volume>35</volume><issue>11A</issue><spage>L1398</spage><pages>L1398-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>A length coefficient for an extended/augmented drift-diffusion model for device simulation was extracted under an exponentially increasing electric field using a multi-valley-band Monte Carlo simulator. The length coefficient increases with electric field and tends to saturate at 0.026 µm, which is half of the previously reported value [Appl. Phys. Lett. 52 (1988) 141]. It was also shown that the coefficient is independent of the low-field mobility.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.35.l1398</doi></addata></record>
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source Institute of Physics IOP Science Extra; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Study of a length coefficient for an extended drift-diffusion model for metal-oxide-semiconductor (MOS) device simulation
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T12%3A18%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Study%20of%20a%20length%20coefficient%20for%20an%20extended%20drift-diffusion%20model%20for%20metal-oxide-semiconductor%20(MOS)%20device%20simulation&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=SONODA,%20K.-I&rft.date=1996-11-01&rft.volume=35&rft.issue=11A&rft.spage=L1398&rft.pages=L1398-&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.35.l1398&rft_dat=%3Cpascalfrancis_cross%3E2502582%3C/pascalfrancis_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c311t-6cddc99f3a855adaec1f1a16ae7223d772464b050adcbdeb9a79cfb2faf6c06c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true