Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates

We investigated the optimum molecular beam epitaxy (MBE) growth conditions for fabrication of a high-reflectivity distributed Bragg reflector (DBR) on (411)A GaAs substrates with extremely flat heterointerfaces. A high-reflectivity DBR mirror consisting of AlAs/GaAs was successfully fabricated under...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996-02, Vol.35 (2A), p.L150-L153, Article L150
Main Authors: HANAMAKI, Y, WATANUKI, Y, AKIYAMA, H, TAKEUCHI, T, OGASAWARA, N, SHIRAKI, Y
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:We investigated the optimum molecular beam epitaxy (MBE) growth conditions for fabrication of a high-reflectivity distributed Bragg reflector (DBR) on (411)A GaAs substrates with extremely flat heterointerfaces. A high-reflectivity DBR mirror consisting of AlAs/GaAs was successfully fabricated under the investigated optimum conditions of growth temperature of 580°C with V/III ( As 4 /Ga) ratio of ∼8. Using this high-reflectivity DBR mirror, we succeeded for the first time in the optically pumped pulse operation of InGaAs vertical-cavity surface-emitting lasers (VCSELs) at room temperature on (411)A GaAs substrates with a threshold excitation power density of 11 MW/cm 2 .
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.35.L150