Direct wafer bonding of a (001) InP-based strained multiple quantum well on a (110) Si substrate with a GaAs buffer layer, aligning cleavage planes of InP and Si

• Published in: Japanese Journal of Applied Physics 1996-12, Vol.35 (12B), p.L1652-L1654
• Main Authors: OKUNO, Y, TAMURA, M
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Electronics; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Metallization, contacts, interconnects; device isolation; Microelectronic fabrication (materials and surfaces technology); Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.35.l1652

We demonstrate direct wafer bonding of a (001) InP-based structure and a (110) Si substrate with a GaAs buffer layer. Cleavage planes of the InP and Si are aligned to obtain a smooth cleaved facet of the InP. Cross-sectional transmission electron microscope observation shows that the InP region is dislocation-free, and that an unexpected In region is formed at the bonded interface. Strong intensity is achieved in the photoluminescence spectrum from the strained multiple quantum well in the InP region, although a peculiar feature is observed in the spectrum measured at room-temperature. The results confirm that our method of direct bonding makes it possible to achieve smooth cleaved facets and high crystalline quality in a III–V layer fabricated on a Si substrate.