Epitaxial Growth of Er 3+ -Doped CaF 2 by Molecular Beam Epitaxy

Monocrystalline Er 3+ -doped CaF 2 layers are grown on CaF 2 substrates by molecular beam epitaxy (MBE) with Er 3+ concentration up to 31.2 wt%. The lattice parameter and the crystallinity of the epilayers are investigated by X-ray diffraction analysis, electron probe microanalysis, and scanning ele...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996-04, Vol.35 (4A), p.L435
Main Authors: Adachi, Kazunori, Yao, Takafumi, Taniuchi, Tetsuo, Kasuya, Atsuo, Miles, Richard H., Uda, Satoshi, Tsuguo Fukuda, Tsuguo Fukuda
Format: Article
Language:English
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Summary:Monocrystalline Er 3+ -doped CaF 2 layers are grown on CaF 2 substrates by molecular beam epitaxy (MBE) with Er 3+ concentration up to 31.2 wt%. The lattice parameter and the crystallinity of the epilayers are investigated by X-ray diffraction analysis, electron probe microanalysis, and scanning electron microscopy. Green light emission at 538 nm is generated by upconversion for the first time, using a 798 nm laser diode pump. Maximum emission intensity at this wavelength is obtained at an Er 3+ concentration of 13.3 wt%.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.35.L435