Cesium-induced Reconstruction on Si(113)3 × 2 Surface Studied by Low Energy Electron Diffraction and X-ray Photoelectron Spectroscopy

We have investigated Cs-induced reconstruction on the Si(113)3×2 surface using low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). For Cs deposition at room temperature, the (3×1) LEED pattern was observed for a wide Cs coverage range. At high substrate temperatures, t...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1997-05, Vol.36 (5R), p.2833
Main Authors: Ki-Seok An, Ki-Seok An, Chan-Cuk Hwang, Chan-Cuk Hwang, Rae-Jun Park, Rae-Jun Park, Ju-Bong Lee, Ju-Bong Lee, Jeong-Seon Kim, Jeong-Seon Kim, Chong-Yun Park, Chong-Yun Park, Soon-Bo Lee, Soon-Bo Lee, Akio Kimura, Akio Kimura, Akito Kakizaki, Akito Kakizaki
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have investigated Cs-induced reconstruction on the Si(113)3×2 surface using low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). For Cs deposition at room temperature, the (3×1) LEED pattern was observed for a wide Cs coverage range. At high substrate temperatures, the (3×1), (1×5+2×) and (2×2) phases were observed with increasing Cs deposition time. The relative Cs saturation coverages of (3×1)-Cs at RT and (2×2)-Cs at 300°C were measured from Cs 3d/Si 2p core level XPS intensity ratios. The results are summarized in a phase diagram as a function of the Cs deposition time.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.36.2833