Gate voltage dependence of the resistance of a two-dimensional array of small tunnel junctions

We studied the gate voltage dependence of the resistance of a two-dimensional array of Al/AlO x /Al small tunnel junctions. The resistance exhibited periodic oscillations similar to those in a single electron transistor in both superconducting and normal states. The amplitude of the oscillation in t...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1997, Vol.36 (6B), p.4020-4021
Main Authors: KAZAWA, H, YAGI, R, ONO, K, OOTUKA, Y, KOBAYASHI, S.-I
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Miscellaneous
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:We studied the gate voltage dependence of the resistance of a two-dimensional array of Al/AlO x /Al small tunnel junctions. The resistance exhibited periodic oscillations similar to those in a single electron transistor in both superconducting and normal states. The amplitude of the oscillation in the superconducting state was much smaller than that in the normal state.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.36.4020