Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency

Main mechanisms of internal carrier losses and leakage from the ground state of quantum dots have been studied in heterostructure lasers based on vertically coupled quantum dots. It has been shown that the threshold current density may be reduced down to 15 A/cm 2 at room temperature by reducing the...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1997-06, Vol.36 (6B), p.4219-4220
Main Authors: ZAITSEV, S. V, GORDEEV, N. YU, ALFEROV, Z. I, KOPCHATOV, V. I, USTINOV, V. M, ZHUKOV, A. E, EGOROV, A. YU, LEDENTSOV, N. N, MAXIMOV, M. V, KOP'EV, P. S, KOSOGOV, A. O
Format: Article
Language:English
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Summary:Main mechanisms of internal carrier losses and leakage from the ground state of quantum dots have been studied in heterostructure lasers based on vertically coupled quantum dots. It has been shown that the threshold current density may be reduced down to 15 A/cm 2 at room temperature by reducing the non-radiative recombination and improving the carrier localization.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.36.4219