Surface Reaction Kinetics of CH 3 in CH 4 RF Discharge Studied by Time-Resolved Threshold Ionization Mass Spectrometry

• Published in: Japanese Journal of Applied Physics 1997-07, Vol.36 (7S), p.4752
• Main Authors: Masaharu Shiratani, Masaharu Shiratani, Jacques Jolly, Jacques Jolly, Hervé Videlot, Hervé Videlot, Jérôme Perrin, Jérôme Perrin
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.36.4752

The surface loss probability β of CH 3 radicals on a-C:H surface is determined by time-resolved threshold ionization mass spectrometry in pulsed RF discharges. In the post-discharge, the β value decreases from 0.011–0.015 to 0.001–0.002 in about 10 ms. This time evolution suggests that the loss probability depends on incoming ion and radical fluxes on the surface. We present a simple model of the surface reaction kinetics in which the number of active chemisorption sites on the surface is determined by the balance between their production, due to ions and/or H, and their annihilation, due to CH 3 radicals. The model describes fairly well the observed decay of the CH 3 radical density and the time evolution of β determined experimentally in the afterglow. The maximum contribution of the CH 3 radicals to the deposition rate of a-C:H films was deduced to be about 60% of the total deposition rate determined experimentally.