The characteristics of polysilicon oxide grown on amorphous silicon deposited from disilane

• Published in: Japanese Journal of Applied Physics 1997-08, Vol.36 (8), p.5040-5043
• Main Authors: Yeou Ming Lin, Yeou Ming Lin, Tan Fu Lei, Tan Fu Lei
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Physics
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.36.5040

The characteristics of polysilicon oxide (polyoxide) grown on amorphous silicon deposited from disilane as the silicon source are reported on. The rate of amorphous silicon deposition from disilane is comparable to that of polysilicon deposition from silane. Moreover, the obtained polyoxide has the desirable electrical characteristics of lower leakage current and higher breakdown field than those of polyoxide grown on polysilicon deposition from silane, urgently needed for nonvolatile memory application. At the same time, the grown polysilicon oxides have lower electron trapping rates and larger charge-to-breakdown ( Q bd ), both attributable to their smoother polyoxide/polysilicon-1 interface than those of polyoxides grown on polysilicon deposition from silane.