Preparation of Epitaxial Pb(Zr, Ti)O 3 Thin Films on Nb-Doped SrTiO 3 (100) Substrates by Dipping-Pyrolysis Process

Epitaxially grown Pb(Zr, Ti)O 3 (PZT, Pb:Zr:Ti=1:0.52:0.48) thin films were prepared on Nb-doped SrTiO 3 (100) substrates by dipping-pyrolysis process with metal naphthenates used as starting materials. The alignments of the films were investigated based on X-ray diffraction (XRD) θ–2θ scans, β scan...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1997-08, Vol.36 (8R), p.5221
Main Authors: Hwang, Kyu-Seog, Manabe, Takaaki, Yamaguchi, Iwao, Toshiya Kumagai, Toshiya Kumagai, Susumu Mizuta, Susumu Mizuta
Format: Article
Language:English
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Summary:Epitaxially grown Pb(Zr, Ti)O 3 (PZT, Pb:Zr:Ti=1:0.52:0.48) thin films were prepared on Nb-doped SrTiO 3 (100) substrates by dipping-pyrolysis process with metal naphthenates used as starting materials. The alignments of the films were investigated based on X-ray diffraction (XRD) θ–2θ scans, β scans (pole figures), and asymmetric ω–2θ scans (reciprocal-space maps). Epitaxial films with smooth surfaces were obtained by heat treatment of prefired films at 600°–750° C; a film heat-treated at 750° C showed the strongest peak intensities in the XRD θ–2θ scans. These PZT films were found by reciprocal-space map analysis to consist of the c -axis-oriented tetragonal phase.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.36.5221