Preparation and piezoelectric property of lead titanate thin films for GHz-band resonators

Film bulk acoustic wave resonators (FBAWRs) at the GHz band were successfully fabricated using piezoelectric lead titanate, PbTiO 3 (PT) films on GaAs substrates by a process similar to that used in microwave integrated circuit (MIC) fabrication. PT films deposited on Pt/Ti bottom electrodes by RF m...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1997-09, Vol.36 (9B), p.6073-6076
Main Authors: YAMADA, A, MAEDA, C, UMEMURA, T, UCHIKAWA, F, MISU, K, WADAKA, S, ISHIKAWA, T
Format: Article
Language:English
Subjects:
Acoustic wave devices, piezoelectric and piezoresistive devices
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Film bulk acoustic wave resonators (FBAWRs) at the GHz band were successfully fabricated using piezoelectric lead titanate, PbTiO 3 (PT) films on GaAs substrates by a process similar to that used in microwave integrated circuit (MIC) fabrication. PT films deposited on Pt/Ti bottom electrodes by RF magnetron sputtering oriented preferentially along the crystal direction. Resonances of the bulk acoustic mode were observed around 1.9 GHz. The effective electromechanical coupling coefficient ( k t 2 ) and electrical Q were estimated to be ∼9.4% and ∼65, respectively. The relationship between residual stress in the PT films and Q was investigated. It was found that stress in the PT film exerted a large influence on Q .
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.36.6073