Theory of semiconductor superjunction devices

A new theory of semiconductor devices, called “semiconductor superjunction (SJ) theory”, is presented. To overcome the trade-off relationship between breakdown voltage and on-resistance of conventional semiconductor devices, SJ devices utilize a number of alternately stacked, p- and n-type, heavily...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1997-10, Vol.36 (10), p.6254-6262
Main Author: FUJIHIRA, T
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Miscellaneous
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:A new theory of semiconductor devices, called “semiconductor superjunction (SJ) theory”, is presented. To overcome the trade-off relationship between breakdown voltage and on-resistance of conventional semiconductor devices, SJ devices utilize a number of alternately stacked, p- and n-type, heavily doped, thin semiconductor layers. By controlling the degree of doping and the thickness of these layers, according to the SJ theory, this structure operates as a pn junction with low on-resistance and high breakdown voltage. Analytical formulas for the ideal specific on-resistance and the ideal breakdown voltage of SJ devices are theoretically derived. Analysis based on the formulas and device simulations reveals that the on-resistance of SJ devices can be reduced to less than 10 -2 that of conventional devices.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.36.6254