Electron-beam-induced oxidation for single-electron devices

A selective-area oxidation technique using electron beam (e-beam) irradiation with a mixture of O 2 and H 2 O gases is studied for the fabrication of small tunnel junctions using Si and Cr. Auger electron spectroscopy clearly shows the existence of Si–O bonding at e-beam-irradiated Si surfaces. The...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1997-12, Vol.36 (12B), p.7782-7785
Main Authors: MATSUTANI, M, WAKAYA, F, TAKAOKA, S, MURASE, K, GAMO, K
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:A selective-area oxidation technique using electron beam (e-beam) irradiation with a mixture of O 2 and H 2 O gases is studied for the fabrication of small tunnel junctions using Si and Cr. Auger electron spectroscopy clearly shows the existence of Si–O bonding at e-beam-irradiated Si surfaces. The height of SiO x is measured by atomic-force-microscope observation, and it is confirmed that the thickness of SiO x can be controlled at a nanometer scale. The line-dose dependence of the resistance of the Cr/CrO x /Cr structure was measured at room temperature and 77 K, and a step-function-like dependence was observed, which indicates that the oxidation takes place over the entire thickness of the 3-nm-thick Cr film. Nonlinear current-voltage characteristics were observed, which suggest that a thin tunneling barrier of CrO x can be realized. The selective-area oxidation technique can be applied to the fabrication of small tunneling junctions.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.36.7782